Péter Boross

PhD Candidate
Department of Materials Physics
Institute of Physics
Faculty of Science
Eötvös Loránd University, Budapest, Hungary

Contact

Office: Eötvös University, Budapest, Pázmány Péter sétány 1/A, Northern Block, 5.75
Email: borosspeter (at) caesar (dot) elte (dot) hu

Research

Theoretical condensed matter physics: Quantum bits in solids - Valleytronics, Transport in graphene, Theory of spin-relaxation

Studies

2012 –	PhD student, Eötvös University (Supervisor: András Pályi)
2014 – 2015	Research Assistant, Eötvös University
2009 – 2012	MSc in Physics, Budapest University of Technology and Economics (Supervisor: Balázs Dóra)
2006 – 2009	BSc in Physics, Budapest University of Technology and Economics (Supervisor: László Orosz)

Publications

• P. Boross, G. Széchenyi and A. Pályi
  Hyperfine-assisted fast electric control of dopant nuclear spins in semiconductors
  [arXiv]
• P. Boross, G. Széchenyi, D. Culcer and A. Pályi
  Control of valley dynamics in silicon quantum dots in the presence of an interface step
  [Phys. Rev. B 94, 035438 (2016)] [arXiv]
• P. Boross, G. Széchenyi and A. Pályi
  Valley-enhanced fast relaxation of gate-controlled donor qubits in silicon
  [Nanotechnology 27, 314002 (2016)] [arXiv]
• P. Boross and A. Pályi
  Valley relaxation in graphene due to charged impurities
  [Phys. Rev. B 92, 035420 (2015)] [arXiv]
• P. Boross, B. Dóra, A. Kiss and F. Simon
  A unified theory of spin-relaxation due to spin-orbit coupling in metals and semiconductors
  [Sci. Rep. 3, 3233 (2013)] [arXiv]
• P. Boross, B. Dóra and R. Moessner
  Testing the Dirac equation against the tight binding model for non-equilibrium graphene
  [physica status solidi (b) 248, 2627 (2011)]